2-Dimentional Multi Tunneling effect of PtSi/Porous Si Schottky barrier

We report a multi tunnelling junction characteristic in P-type porous silicon core coated with thin film platinum silicide. Detailed analysis of electron transport in this device admits the existence of a structure like a twodimensional Multi Tunnelling Junctions (2D-MTJ) clearly originate from the sharp edge of created platinum silicide on porous surface. Furthermore, using SIMON simulator, electrical characteristics of proposed 2D-MTJ that modelled as a set of islands, has been extracted to investigate experimental data curves. In accordance with both studies, same oscillations based on coulomb blockade oscillations were observed. In addition the value of current tends to increase proportionally with temperature and for high drain voltage; the device behaves like a single island Single Electron Tunnelling (SET) junction as the simulation predicts. This is probably due to this fact that multiple tunnelling junctions are electrically enlarged and merged into a single island owing to the high applied drain voltage. Also temperature dependence of the coulomb oscillation as a function of gate voltage offers the possible application of this device up to room treatment without cooling payments in comparison to MTJs.